CMBT2222A

更新时间： 2024-11-18 03:25:59

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
4页	146K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

获取价格

数据手册

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CMBT2222A 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SOT-23 Formed SMD Package

CMBT2222

CMBT2222A

SILICON PLANAR EPITAXIAL TRANSISTORS

N–P–N silicon transistors

Marking

CMBT2222 = lB

CMBT2222A = lP

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

CM BT2222 CM BT2222A

Collector–base voltage (open ernitter)

Collector–emitter voltage (open base)

Emitter base voltage (open collector)

Collector current (d.c.)

max.

max. 5,0

max.

6,0

CB0

CE0

EB0

600

250

m W

Total power dissipation up to T

D.C. current gain

= 25 °C

max.

amb

tot

= 150mA; V

= 10V

100 to 300

lC = 500mA; V

Transition frequency at f = 100 MHz

= 20 mA; V = 20 V

250

300

MHz

Continental Device India Limited

Data Sheet

Page 1 of 4

12 3 4

中文翻译

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