CMBT2369

更新时间： 2024-02-07 14:28:47

品牌	Logo	应用领域
CDIL		晶体开关晶体管局域网
页数	文件大小	规格书
3页	156K
描述
SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR

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获取价格

数据手册

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CMBT2369 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SOT-23 Formed SMD Package

CMBT2369

SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR

N–P N transistor

Marking

CMBT2369 = lJ

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter)

max.

max. 500 mA

max. 250 m W

40 V

15 V

CB0

CES

CE0

Collector–emitter voltage (V

= 0)

Collector–emitter voltage (open base)

Collector current (d.c. value)

Total power dissipation up to T

D.C. current gain

= 25 °C

amb

tot

= 10mA; V

= 1 V

= 2 V

40 to 120

= 100 mA; V

Storage time

= I

= 10 mA

13 ns

Con

Bon

Boff

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

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