5秒后页面跳转
CMBT2907 PDF预览

CMBT2907

更新时间: 2024-11-01 03:25:59
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
4页 91K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

CMBT2907 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):100 ns最大开启时间(吨):45 ns
Base Number Matches:1

CMBT2907 数据手册

 浏览型号CMBT2907的Datasheet PDF文件第2页浏览型号CMBT2907的Datasheet PDF文件第3页浏览型号CMBT2907的Datasheet PDF文件第4页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
SOT-23 Formed SMD Package  
CMBT2907  
CMBT2907A  
SILICON PLANAR EPITAXIAL TRANSISTORS  
P–N–P silicon transistors  
Marking  
CMBT2907 = 2B  
CMBT2907A = 2F  
PACKAGE OUTLINE DETAILS  
ALL DIMENSIONS IN mm  
Pin configuration  
1 = BASE  
2 = EMITTER  
3 = COLLECTOR  
3
1
2
ABSOLUTE MAXIMUM RATINGS  
CM BT2907 CM BT2907A  
Collector–base voltage (open emitter)  
Collector–emitter voltage (open base)  
Emitter–base voltage (open collector)  
Collector current (d.c.)  
–V  
–V  
–V  
max. 60  
max. 40  
max.  
max.  
max.  
60  
60  
V
V
V
CB0  
CE0  
EB0  
5,0  
600  
250  
150  
–I  
mA  
m W  
° C  
C
Total power dissipation up to T  
Junction temperature  
= 25 °CP  
amb  
tot  
T
j
max.  
D.C. current gain  
–I = 500mA; –V  
CE  
= 10V  
h
>
<
>
30  
50  
C
FE  
Turn–off switching time  
—I = 150 mA; –I  
= I  
= 15 mA t  
100  
200  
ns  
Con Bon  
Boff  
off  
T
Transition frequency at f = 100 MHz  
—I = 50 mA; –V = 20 V  
f
MHz  
C
CE  
Continental Device India Limited  
Data Sheet  
Page 1 of 4  

与CMBT2907相关器件

型号 品牌 获取价格 描述 数据表
CMBT2907A CDIL

获取价格

SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2907A RECTRON

获取价格

SOT-23 - Power Transistor and Darlingtons
CMBT3903 CDIL

获取价格

SILICON EPITAXIAL TRANSISTORS
CMBT3904 CDIL

获取价格

SILICON EPITAXIAL TRANSISTORS
CMBT3904 RECTRON

获取价格

SOT-23 - Power Transistor and Darlingtons
CMBT3904E CENTRAL

获取价格

COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS
CMBT3904E_10 CENTRAL

获取价格

ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
CMBT3904EBKPBFREE CENTRAL

获取价格

暂无描述
CMBT3904ETR CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, 0.80 X
CMBT3904ETRLEADFREE CENTRAL

获取价格

Transistor