Datasheet > CMBSS84

CMBSS84

更新时间： 2024-11-02 17:15:19

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	999K
描述
SOT-23

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CMBSS84 数据手册

CMBSS84

P-Channel 60V(D-S) Power MOSFET

Description

Applications

CMBSS84 is the P-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.

•

Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features

•

VDS: -60V

ID: -0.17A

Device Code = B84.

B84.

RDS_ON(@VGS=-10V) : < 8Ω

RDS_ON(@VGS=-4.5V) : < 10Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SOT-23 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CMBSS84

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-60

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

TA=70°C

-0.17

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

-0.14

IDM

-0.68

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

225

°C/W

°C

RθJA

556

TJ,TSTG

-55 to +150

Aug. 2020, Rev. 0.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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