Datasheet > CGHV27200P

CGHV27200P

更新时间： 2024-02-01 12:40:38

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	699K
描述
RF Power Field-Effect Transistor,

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技术参数
数据手册

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CGHV27200P 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CGHV27200P 数据手册

CGHV27200

200 W, 2500-2700 MHz, GaN HEMT for LTE

Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor

(HEMT) is designed speciﬁcally for high efﬁciency, high gain and wide

bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz

LTE and BWA ampliﬁer applications. The transistor is input matched and

supplied in a ceramic/metal ﬂange package.

Typical Performance Over 2.5 - 2.7 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain @ 46 dBm

15.0

16.0

ACLR @ 46 dBm

Drain Efﬁciency @ 46 dBm

Note:

-36.5

29.0

-37.5

28.5

-37.0

29.0

dBc

Measured in the CGHV27200-TB ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Features

• 2.5 - 2.7 GHz Operation

• 16 dB Gain

• -37 dBc ACLR at 40 W P_AVE

• 29 % Efﬁciency at 40 W P_AVE

• High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/rf

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与CGHV27200P相关器件

型号	品牌	获取价格	描述	数据表
CGHV27200-TB	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
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CGHV31500F-TB	CREE	获取价格	500 W, 2700 - 3100 MHz, 50-Ohm Input
CGHV35060MP	CREE	获取价格	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
CGHV35060MP	MACOM	获取价格	60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations
CGHV35060MP_16	CREE	获取价格	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
CGHV35060MP-AMP1	CREE	获取价格	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations