Datasheet > CGHV27200_15

CGHV27200_15

更新时间： 2024-01-05 00:43:23

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
12页	1160K
描述
200 W, 2500-2700 MHz, GaN HEMT for LTE

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CGHV27200_15 数据手册

CGHV27200

200 W, 2500-2700 MHz, GaN HEMT for LTE

Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

is designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV27200 ideal for 2.5-2.7 GHz LTE and BWA ampliﬁer applications.

The transistor is input matched and supplied in a ceramic/metal ﬂange package.

Typical Performance Over 2.5 - 2.7 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain @ 46 dBm

15.0

16.0

ACLR @ 46 dBm

Drain Efﬁciency @ 46 dBm

Note:

-36.5

29.0

-37.5

28.5

-37.0

29.0

dBc

Measured in the CGHV27200-AMP ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Features

•

2.5 - 2.7 GHz Operation

16 dB Gain

-37 dBc ACLR at 40 W P_AVE

29 % Efﬁciency at 40 W P_AVE

High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...12

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