Datasheet > CGHV27100P

CGHV27100P

更新时间： 2024-01-12 10:13:06

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
11页	1037K
描述
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CGHV27100P 数据手册

CGHV27100

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

is designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA

ampliﬁer applications. The transistor is input matched and supplied in a ceramic/

metal pill and ﬂange packages.

Typical Performance Over 2.5 - 2.7 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain @ 44 dBm

18.1

18.0

17.9

ACLR @ 44 dBm

Drain Efﬁciency @ 44 dBm

Note:

-37.0

34.0

-37.0

33.5

-37.0

32.0

dBc

Measured in the CGHV27100-AMP ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF, V_DD= 50 V, I_DS= 500 mA.

Features

•

2.5 - 2.7 GHz Operation

18.0 dB Gain

-37 dBc ACLR at 25 W P_AVE

33 % Efﬁciency at 25 W P_AVE

High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

中文翻译

下载PDF

与CGHV27100P相关器件

型号	品牌	获取价格	描述	数据表
CGHV27100-TB	CREE	获取价格	100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
CGHV27200	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200_15	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200-AMP	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200F	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200P	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV27200-TB	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27300MP	CREE	获取价格	RF Power Field-Effect Transistor
CGHV31500	MACOM	获取价格	500W, 2.7 - 3.1 GHz, GaN IMFET
CGHV31500F	CREE	获取价格	500 W, 2700 - 3100 MHz, 50-Ohm Input