Datasheet > CGHV27200

CGHV27200

更新时间： 2024-09-24 12:52:47

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
11页	696K
描述
200 W, 2500-2700 MHz, GaN HEMT for LTE

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CGHV27200 数据手册

PRELIMINARY

CGHV27200

200 W, 2500-2700 MHz, GaN HEMT for LTE

Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility

transistor (HEMT) designed speciﬁcally for high efﬁciency, high gain and

wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-

2.7 GHz LTE and BWA ampliﬁer applications. The transistor is supplied in a

ceramic/metal ﬂange package.

Typical Performance Over 2.5 - 2.7 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain @ 47 dBm

15.0

16.0

ACLR @ 47 dBm

Drain Efﬁciency @ 47 dBm

Note:

-36.5

29.0

-37.5

28.5

-37.0

29.0

dBc

Measured in the CGHV27200-TB ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Features

• 2.5 - 2.7 GHz Operation

• 16 dB Gain

• -37 dBc ACLR at 50 W P_AVE

• 29 % Efﬁciency at 50 W P_AVE

• High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/rf

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CGHV27200-AMP	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200F	CREE	获取价格	200 W, 2500-2700 MHz, GaN HEMT for LTE
CGHV27200P	CREE	获取价格	RF Power Field-Effect Transistor,
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CGHV31500	MACOM	获取价格	500W, 2.7 - 3.1 GHz, GaN IMFET
CGHV31500F	CREE	获取价格	500 W, 2700 - 3100 MHz, 50-Ohm Input
CGHV31500F-AMP	CREE	获取价格	500 W, 2700 - 3100 MHz, 50-Ohm Input
CGHV31500F-TB	CREE	获取价格	500 W, 2700 - 3100 MHz, 50-Ohm Input