Datasheet > BUK9C10-55BIT

BUK9C10-55BIT

更新时间： 2024-11-13 21:18:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	332K
描述
POWER, FET

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技术参数
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BUK9C10-55BIT 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

BUK9C10-55BIT 数据手册

BUK9C10-55BIT

N-channel TrenchPLUS logic level FET

25 August 2014

Product data sheet

1. General description

Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET

technology. The device includes TrenchPLUS current sensing and integrated diodes

for temperature sensing. This product has been designed and qualified to AEC Q101

standard for use in high performance automotive applications.

2. Features and benefits

AEC-Q101 Compliant

•

Enables temperature monitoring due to integrated temperature sensor

Enables current sense measurement due to integrated current senseFET

Suitable for thermally demanding environments due to 175 °C rating

3. Applications

12 V Automotive systems

Motors, lamps and solenoid control

Powertrain, chassis and body applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 5 V; I_D= 10 A; T_j= 25 °C;

Fig. 16; Fig. 17

8.2

7.5

mΩ

V_GS= 10 V; I_D= 10 A; T_j= 25 °C;

Fig. 16; Fig. 17

I_D/I_sense

ratio of drain current to -55 °C < T_j< 175 °C; V_GS= 5 V; Fig. 18

sense current

10000 11000 12000 A/A

S_F(TSD)

temperature sense

diode temperature

coefficient

I_F= 250 µA; -55 °C ≤ T_j≤ 175 °C;

Fig. 19

-5.7

-6

-6.3

mV/K

V_(BR)DSS

drain-source

I_D= 25 mA; V_GS= 0 V; T_j= 25 °C

I_F= 250 µA; T_j= 25 °C; Fig. 19

breakdown voltage

V_F(TSD)

temperature sense

2.855 2.9

2.945

diode forward voltage

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