Datasheet > BUK9E04-40A,127

BUK9E04-40A,127

更新时间： 2024-09-25 14:48:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	212K
描述
N-channel TrenchMOS logic level FET TO-262 3-Pin

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技术参数
数据手册

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BUK9E04-40A,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-262
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.71	Is Samacsys：	N
Base Number Matches：	1

BUK9E04-40A,127 数据手册

BUK9504-40A

-220AB

N-channel TrenchMOS logic level FET

Rev. 2 — 7 February 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for logic level gate drive

sources

Low conduction losses due to low

on-state resistance

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

Motors, lamps and solenoids

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

300

Static characteristics

R_DSondrain-source

V_GS= 4.3 V; I_D= 25 A;

T_j= 25 °C

3.7

2.9

3.5

5.9

mΩ

on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C

V_GS= 5 V; I_D= 25 A;

T_j= 25 °C; see Figure 11;

see Figure 12

4.4

12 3 4 5 6 7...14

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