Datasheet > BUK9E2R8-60E,127

BUK9E2R8-60E,127

更新时间： 2024-02-09 08:17:03

品牌	Logo	应用领域
恩智浦 - NXP		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	208K
描述
N-channel TrenchMOS logic level FET TO-262 3-Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BUK9E2R8-60E,127 技术参数

生命周期：	Obsolete	零件包装代码：	TO-262
包装说明：	PLASTIC, TO-262, I2PAK-3	针数：	3
风险等级：	5.84	Base Number Matches：	1

BUK9E2R8-60E,127 数据手册

BUK9E2R8-60E

N-channel TrenchMOS logic level FET

11 September 2012

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C

•

1.3 Applications

12 V Automotive systems

•

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 1

[1]

120

349

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 25 A; T_j= 25 °C; Fig. 11

2.2

2.8

mΩ

V_GS= 5 V; I_D= 25 A; V_DS= 48 V;

Fig. 13; Fig. 14

41.2

[1] Continuous current is limited by package.

Scan or click this QR code to view the latest information for this product

12 3 4 5 6 7...13

中文翻译

下载PDF

BUK9E2R8-60E,127 替代型号

型号	品牌	替代类型	描述	数据表
IPI120N06S4-02	INFINEON	功能相似	OptiMOS-T2 Power-Transistor

与BUK9E2R8-60E,127相关器件

型号	品牌	获取价格	描述	数据表
BUK9E3R2-40B	NXP	获取价格	TrenchMOS logic level FET
BUK9E3R2-40B,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E3R2-40E	NXP	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
BUK9E3R2-40E,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E3R7-60E,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E4R4-40B	NXP	获取价格	TrenchMOS logic level FET
BUK9E4R4-80E	NXP	获取价格	TRANSISTOR 120 A, 80 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-26
BUK9E4R4-80E,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E4R9-60E	NXP	获取价格	TRANSISTOR 100 A, 60 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-26
BUK9E4R9-60E,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin