是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.83 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 488 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (Abs) (ID): | 120 A | 最大漏极电流 (ID): | 120 A |
最大漏源导通电阻: | 0.0044 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 349 W |
最大脉冲漏极电流 (IDM): | 715 A | 参考标准: | AEC-Q101; IEC-60134 |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9E4R9-60E | NXP |
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TRANSISTOR 100 A, 60 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-26 | |
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