Datasheet > BUK9K35-60RA

BUK9K35-60RA

更新时间： 2024-11-24 11:14:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	312K
描述
Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technologyProduction

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BUK9K35-60RA 数据手册

BUK9K35-60RA

Dual N-channel 60 V, 35 mOhm logic level MOSFET in

LFPAK56D using Repetitive Avalanche technology

2 December 2020

Product data sheet

1. General description

Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific

(ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to

AEC-Q101 for use in repetitive avalanche applications.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101 at 175 °C

Repetitive Avalanche rated to 30 °C T_jrise:

Tested to 1 Bn avalanche events

LFPAK copper clip package technology:

•

High robustness and reliability

Gull wing leads for high manufacturability and AOI

3. Applications

•

12 V, 24 V and 48 V automotive systems

Repetitive avalanche topologies

Engine control

Transmission control

Actuator and auxiliary loads

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

I_D

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics FET1 and FET2

R_DSon

drain-source on-state

resistance

V_GS= 5 V; I_D= 5 A; T_j= 25 °C; Fig. 15

30.5

mΩ

Dynamic characteristics FET1 and FET2

Q_GDgate-drain charge

I_D= 5 A; V_DS= 48 V; V_GS= 5 V;

T_j= 25 °C; Fig. 17; Fig. 18

12 3 4 5 6 7...13

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