5秒后页面跳转
BUK9M20-60EL PDF预览

BUK9M20-60EL

更新时间: 2024-11-24 11:14:43
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 297K
描述
Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technologyProduction

BUK9M20-60EL 数据手册

 浏览型号BUK9M20-60EL的Datasheet PDF文件第2页浏览型号BUK9M20-60EL的Datasheet PDF文件第3页浏览型号BUK9M20-60EL的Datasheet PDF文件第4页浏览型号BUK9M20-60EL的Datasheet PDF文件第5页浏览型号BUK9M20-60EL的Datasheet PDF文件第6页浏览型号BUK9M20-60EL的Datasheet PDF文件第7页 
BUK9M20-60EL  
Single N-channel 60 V, 13 mOhm logic level MOSFET in  
LFPAK33 using Enhanced SOA technology  
7 April 2022  
Product data sheet  
1. General description  
Single, logic level, N-channel MOSFET in LFPAK33 using Application specific (ASFET) Enhanced  
SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear  
mode in airbag applications.  
2. Features and benefits  
Fully automotive qualified to AEC-Q101 at 175 °C  
Enhanced SOA technology for improved linear mode performance  
LFPAK copper clip package technology:  
High robustness and current handling capability  
Gull wing leads for easy AOI inspection and exceptional board level reliability  
3. Applications  
12 V automotive systems  
Airbag squib voltage regulator MOSFET  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
ID  
[1]  
40  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
79.4  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 15 A; Tj = 25 °C;  
Fig. 13  
7.3  
-
10.4  
9
13  
18  
mΩ  
nC  
ID = 15 A; VDS = 48 V; VGS = 4.5 V;  
Tj = 25 °C; Fig. 15; Fig. 16  
[1] 40 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature.  
 
 
 
 
 

与BUK9M20-60EL相关器件

型号 品牌 获取价格 描述 数据表
BUK9M23-80E NEXPERIA

获取价格

N-channel 80 V, 23 mΩ logic level MOSFET in L
BUK9M24-40E NEXPERIA

获取价格

N-channel 40 V, 24 mΩ logic level MOSFET in L
BUK9M24-40EX ETC

获取价格

MOSFET N-CH 40V 30A LFPAK
BUK9M24-60E NEXPERIA

获取价格

N-channel 60 V, 24 mΩ logic level MOSFET in L
BUK9M28-80E NEXPERIA

获取价格

N-channel 80 V, 28 mΩ logic level MOSFET in L
BUK9M31-60EL NEXPERIA

获取价格

Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology
BUK9M34-100E NEXPERIA

获取价格

N-channel 100 V, 34 mΩ logic level MOSFET in
BUK9M35-80E NEXPERIA

获取价格

N-channel 80 V, 35 mΩ logic level MOSFET in L
BUK9M3R3-40H NEXPERIA

获取价格

N-channel 40 V, 3.3 mΩ logic level MOSFET in
BUK9M42-60E NEXPERIA

获取价格

N-channel 60 V, 42 mΩ logic level MOSFET in L