Datasheet > BUK9M43-100E

BUK9M43-100E

更新时间： 2024-11-24 11:14:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	276K
描述
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33Production

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BUK9M43-100E 数据手册

BUK9M43-100E

N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33

2 October 2017

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance

automotive applications.

2. Features and benefits

•

Q101 compliant

•

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V_GS(th)rating of greater than 0.5 V at 175 °C

3. Applications

•

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

I_D

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 5 A; T_j= 25 °C; Fig. 11

mΩ

I_D= 5 A; V_DS= 80 V; V_GS= 5 V;

T_j= 25 °C; Fig. 13; Fig. 14

8.2

12 3 4 5 6 7...13

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