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BUK9MJJ-55PTT PDF预览

BUK9MJJ-55PTT

更新时间: 2024-11-26 06:44:39
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
15页 260K
描述
Dual TrenchPLUS logic level FET

BUK9MJJ-55PTT 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT包装说明:PLASTIC, SOP-20
针数:20Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):12.9 A
最大漏极电流 (ID):0.0129 A最大漏源导通电阻:0.0167 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):180 pF
JESD-30 代码:R-PDSO-G20湿度敏感等级:3
元件数量:2端子数量:20
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):4.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9MJJ-55PTT 数据手册

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BUK9MJJ-55PTT  
Dual TrenchPLUS logic level FET  
Rev. 01 — 14 May 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is  
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring  
very low on-state resistance, integrated current sensing transistors and over temperature  
protection diodes.  
1.2 Features and benefits  
„ Integrated current sensors  
„ Integrated temperature sensors  
1.3 Applications  
„ Lamp switching  
„ Power distribution  
„ Solenoid drivers  
„ Motor drive systems  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
Static characteristics, FET1 and FET2  
Quick reference  
Conditions  
Min  
Typ  
Max Unit  
RDSon  
drain-source  
on-state resistance  
VGS = 5 V; ID = 10 A;  
Tj = 25 °C; see Figure 16;  
see Figure 17  
-
13  
15  
m  
ID/Isense ratio of drain current Tj = 25 °C; VGS = 5 V; see  
5850 6500 7150 A/A  
55  
to sense current  
Figure 18  
V(BR)DSS drain-source  
breakdown voltage  
Tj = 25 °C; VGS = 0 V;  
ID = 250 µA  
-
-
V

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