Datasheet > BUK9M4R3-40H

BUK9M4R3-40H

更新时间： 2024-11-27 11:11:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	306K
描述
N-channel 40 V, 4.3 mΩ logic level MOSFET in LFPAK33Production

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BUK9M4R3-40H 数据手册

BUK9M4R3-40H

N-channel 40 V, 4.3 mΩ logic level MOSFET in LFPAK33

30 March 2020

Product data sheet

1. General description

Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9

TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high

performance automotive applications.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101 at 175 °C

Trench 9 superjunction technology:

Low power losses, high power density

LFPAK copper clip package technology:

•

High robustness and reliability

Gull wing leads for high manufacturability and AOI

•

Repetitive avalanche rated

3. Applications

•

12 V automotive systems

Powertrain, chassis, body and infotainment applications

Medium/Low power motor drive

DC-DC systems

LED lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

2.4

3.4

3.3

4.3

6.6

mΩ

Q_GD

gate-drain charge

I_D= 25 A; V_DS= 20 V; V_GS= 4.5 V;

Fig. 13; Fig. 14

Source-drain diode

Q_r

recovered charge

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V

12 3 4 5 6 7...13

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