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BUK9M31-60EL PDF预览

BUK9M31-60EL

更新时间: 2024-10-02 11:13:23
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 301K
描述
Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technologyProduction

BUK9M31-60EL 数据手册

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BUK9M31-60EL  
Single N-channel 60 V, 21 mOhm logic level MOSFET in  
LFPAK33 using Enhanced SOA technology  
9 May 2022  
Product data sheet  
1. General description  
Single, logic level, N-channel MOSFET in LFPAK33 using Application specific (ASFET) Enhanced  
SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear  
mode in airbag applications.  
2. Features and benefits  
Fully automotive qualified to AEC-Q101 at 175 °C  
Enhanced SOA technology for improved linear mode performance  
LFPAK copper clip package technology:  
High robustness and current handling capability  
Gull wing leads for easy AOI inspection and exceptional board level reliability  
3. Applications  
12 V automotive systems  
Airbag squib voltage regulator MOSFET  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
ID  
[1]  
35  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
62  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 10 A; Tj = 25 °C;  
Fig. 12  
11.6  
-
16.5  
6
20.6  
12  
mΩ  
nC  
ID = 10 A; VDS = 48 V; VGS = 4.5 V;  
Tj = 25 °C; Fig. 14; Fig. 15  
[1] 35 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature.  
 
 
 
 
 

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