Datasheet > BUK9M24-40EX

BUK9M24-40EX

更新时间： 2024-10-01 22:59:27

品牌	Logo	应用领域
其他 - ETC		开关脉冲晶体管
页数	文件大小	规格书
13页	721K
描述
MOSFET N-CH 40V 30A LFPAK

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中文翻译

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BUK9M24-40EX 数据手册

BUK9M24-40E

N-channel 40 V, 24 mΩ logic level MOSFET in LFPAK33

19 September 2016

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V_GS(th)rating of greater than 0.5 V at 175 °C

•

3. Applications

12 V automotive systems

Motors, lamps and solenoid control

Transmission control

•

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 10 A; T_j= 25 °C; Fig. 11

mΩ

I_D= 10 A; V_DS= 32 V; V_GS= 5 V;

T_j= 25 °C; Fig. 13; Fig. 14

3.3

12 3 4 5 6 7...13

中文翻译

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