Datasheet > BUK9M120-100E

BUK9M120-100E

更新时间： 2024-11-27 11:11:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	723K
描述
N-channel 100 V, 120 mΩ logic level MOSFET in LFPAK33Production

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BUK9M120-100E 数据手册

BUK9M120-100E

N-channel 100 V, 120 mΩ logic level MOSFET in LFPAK33

19 September 2016

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V_GS(th)rating of greater than 0.5 V at 175 °C

•

3. Applications

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

•

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

11.5

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 5 A; T_j= 25 °C; Fig. 11

100

3.9

120

mΩ

I_D= 5 A; V_DS= 80 V; V_GS= 5 V;

T_j= 25 °C; Fig. 13; Fig. 14

12 3 4 5 6 7...13

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