Datasheet > BUK9L06-55B

BUK9L06-55B

更新时间： 2024-11-22 23:37:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
13页	273K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 75A I(D) \| TO-220AB

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BUK9L06-55B 数据手册

BUK9L06-55B

TrenchMOS™ logic level FET

Rev. 01 — 13 August 2002

Product data

M3D794

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

on-state resistance.

Product availability:

BUK9L06-55B in SOT78C (TO-220AB).

1.2 Features

■ TrenchMOS™ technology

■ 175 °C rated

■ Q101 compliant

■ Logic level compatible.

1.3 Applications

■ Automotive systems

■ 12 V and 24 V loads

■ Motors, lamps and solenoids

■ General purpose power switching.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

V_DS

I_D

drain-source voltage (DC)

drain current (DC)

T_mb= 25 °C; V_GS= 5 V

T_mb= 25 °C

139

234

175

6.0

6.4

5.4

P_tot

T_j

total power dissipation

junction temperature

°C

R_DSon

drain-source on-state resistance

T_j= 25 °C; V_GS= 5 V; I_D= 25 A

T_j= 25 °C; V_GS= 4.5 V; I_D= 25 A

T_j= 25 °C; V_GS= 10 V; I_D= 25 A

5.1

mΩ

4.8

12 3 4 5 6 7...13

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