Datasheet > BUK9K29-100E

BUK9K29-100E

更新时间： 2024-10-02 11:13:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	738K
描述
Dual N-channel TrenchMOS logic level FETProduction

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BUK9K29-100E 数据手册

BUK9K29-100E

Dual N-channel TrenchMOS logic level FET

28 March 2013

Product data sheet

1. General description

Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V_GS(th)> 0.5 V @ 175 °C

•

3. Applications

12 V Automotive systems

•

Motors, lamps and solenoid control

Start-stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 1

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 2

junction temperature

-55

175

°C

Static characteristics FET1 and FET2

R_DSon

drain-source on-state

resistance

V_GS= 5 V; I_D= 5 A; T_j= 25 °C; Fig. 12

25.1

mΩ

Dynamic characteristics FET1 and FET2

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 10 A; V_DS= 80 V; V_GS= 10 V;

T_j= 25 °C; Fig. 14; Fig. 15

10.9

12 3 4 5 6 7...13

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