Datasheet > BUK9C10-65BIT,118

BUK9C10-65BIT,118

更新时间： 2024-09-25 19:58:23

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
15页	165K
描述
BUK9C10-65BIT - N-channel TrenchPLUS logic level FET D2PAK 7-Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BUK9C10-65BIT,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	7	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

BUK9C10-65BIT,118 数据手册

浏览型号BUK9C10-65BIT,118的Datasheet PDF文件第2页

浏览型号BUK9C10-65BIT,118的Datasheet PDF文件第3页

浏览型号BUK9C10-65BIT,118的Datasheet PDF文件第4页

浏览型号BUK9C10-65BIT,118的Datasheet PDF文件第5页

浏览型号BUK9C10-65BIT,118的Datasheet PDF文件第6页

BUK9C10-65BIT

N-channel TrenchPLUS logic level FET

Rev. 02 — 21 June 2010

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode field-effect power transistor in SOT427. Device is

manufactured using NXP High-Performance TrenchPLUS technology, featuring very low

on-state resistance, integrated current sensing transistors and over temperature

protection diodes.

1.2 Features and benefits

 AEC-Q101 compliant

 Low conduction losses due to low

on-state resistance

1.3 Applications

 Lamp switching

 Power distribution

 Solenoid drivers

 Motor drive systems

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter Conditions

Min Typ Max Unit

Static characteristics

R_DSon

drain-source

on-state

resistance

V_GS= 5 V; I_D= 25 A;

T_j= 25 °C; see Figure 13;

see Figure 12

8.5

mΩ

I_D/I_sense

ratio of drain

current to sense

current

T_j= 25 °C; V_GS= 5 V;

see Figure 14

8094 8993 9892 A/A

V_(BR)DSS

drain-source

breakdown

voltage

I_D= 250 µA; V_GS= 0 V;

T_j= 25 °C

12 3 4 5 6 7...15

中文翻译

下载PDF

与BUK9C10-65BIT,118相关器件

型号	品牌	获取价格	描述	数据表
BUK9D120-60P	NEXPERIA	获取价格	60 V, P-channel Trench MOSFETProduction
BUK9D23-40E	NEXPERIA	获取价格	40 V, N-channel Trench MOSFETProduction
BUK9E04-30B	NXP	获取价格	TrenchMOS logic level FET
BUK9E04-30B,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E04-40A	NXP	获取价格	TrenchMOS logic level FET
BUK9E04-40A,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E06-55A	NXP	获取价格	TrenchMOS logic level FET
BUK9E06-55B	NXP	获取价格	N-channel TrenchMOS FET
BUK9E06-55B,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
BUK9E08-55B	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET