Datasheet > BUK9E04-30B

BUK9E04-30B

更新时间： 2024-09-25 09:02:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	256K
描述
TrenchMOS logic level FET

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中文翻译

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数据手册

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BUK9E04-30B 数据手册

BUK9E04-30B

TrenchMOS™ logic level FET

Rev. 01 — 14 November 2003

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive TrenchMOS™ technology.

1.2 Features

■ Very low on-state resistance

■ 175 °C rated

■ Q101 compliant

■ Logic level compatible.

1.3 Applications

■ Automotive systems

■ 12 V loads

■ Motors, lamps and solenoids

■ General purpose power switching.

1.4 Quick reference data

■ E_DS(AL)S≤ 1.3 J

■ I_D≤ 75 A

■ R_DSon= 3.4 mΩ (typ)

■ P_tot≤ 254 W.

2. Pinning information

Table 1:

Pinning - SOT226 simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

drain (d)

source (s)

mounting base,

connected to

drain (d)

MBB076

2 3

MBK112

SOT226 (I²-PAK)

12 3 4 5 6 7...13

中文翻译

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BUK9E04-30B,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
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BUK9E04-40A,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-262 3-Pin
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BUK9E08-55B	NXP	获取价格	75A, 55V, 0.0093ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3
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