Datasheet > BUK755R4-100E,127

BUK755R4-100E,127

更新时间： 2024-11-23 20:00:47

品牌	Logo	应用领域
恩智浦 - NXP		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	206K
描述
N-channel TrenchMOS standard level FET TO-220 3-Pin

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BUK755R4-100E,127 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-220	针数：	3
Reach Compliance Code：	not_compliant	风险等级：	5.75
Base Number Matches：	1

BUK755R4-100E,127 数据手册

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BUK755R4-100E

N-channel TrenchMOS standard level FET

11 September 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with VGS(th) rating of greater than 1V at 175 °C

•

1.3 Applications

12V, 24V and 48V Automotive systems

•

Electric and electro-hydraulic power steering

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

120

349

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

4.1

5.2

mΩ

V_GS= 10 V; I_D= 25 A; V_DS= 80 V;

T_j= 25 °C; Fig. 13; Fig. 14

[1] Continuous current is limited by package.

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