生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | PLASTIC, SC-46, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 雪崩能效等级(Eas): | 110 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 26 A |
最大漏极电流 (ID): | 26 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 106 W |
最大脉冲漏极电流 (IDM): | 106 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK7560-100A,127 | NXP |
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BUK7560-100A | |
BUK7575-100A | NXP |
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TrenchMOS standard level FET | |
BUK7575-55 | NXP |
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TrenchMOS transistor Standard level FET | |
BUK7575-55A | NXP |
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TrenchMOS standard level FET | |
BUK7575-55A,127 | NXP |
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N-channel TrenchMOS standard level FET TO-220 3-Pin | |
BUK7604-40A | NXP |
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TrenchMOS standard level FET | |
BUK7604-40A,118 | NXP |
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N-channel TrenchMOS standard level FET D2PAK 3-Pin | |
BUK7604-40A/T3 | NXP |
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TRANSISTOR 75 A, 36 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Gen | |
BUK7605-30A | NXP |
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TrenchMOS transistor Standard level FET | |
BUK7605-30A/T3 | NXP |
获取价格 |
TRANSISTOR 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET |