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BUK7606-55B PDF预览

BUK7606-55B

更新时间: 2024-11-23 21:14:15
品牌 Logo 应用领域
飞利浦 - PHILIPS /
页数 文件大小 规格书
15页 104K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK7606-55B 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliant风险等级:5.71
配置:Single最大漏极电流 (Abs) (ID):75 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):254 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

BUK7606-55B 数据手册

 浏览型号BUK7606-55B的Datasheet PDF文件第2页浏览型号BUK7606-55B的Datasheet PDF文件第3页浏览型号BUK7606-55B的Datasheet PDF文件第4页浏览型号BUK7606-55B的Datasheet PDF文件第5页浏览型号BUK7606-55B的Datasheet PDF文件第6页浏览型号BUK7606-55B的Datasheet PDF文件第7页 
BUK75/7606-55B  
TrenchMOS™ standard level FET  
Rev. 01 — 31 March 2003  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.  
Product availability:  
BUK7506-55B in SOT78 (TO-220AB)  
BUK7606-55B in SOT404 (D2-PAK).  
1.2 Features  
Very low on-state resistance  
175 °C rated  
Q101 compliant  
Standard level compatible.  
1.3 Applications  
Automotive systems  
12 V and 24 V loads  
Motors, lamps and solenoids  
General purpose power switching.  
1.4 Quick reference data  
EDS(AL)S 680 mJ  
ID 75 A  
RDSon = 5.1 m(typ)  
Ptot 254 W.  
2. Pinning information  
Table 1:  
Pinning - SOT78 and SOT404 simplified outlines and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
[1]  
mb  
2
drain (d)  
d
3
source (s)  
mb  
mounting base,  
connected to  
drain (d)  
g
s
MBB076  
2
MBK106  
1
3
MBK116  
1
2 3  
SOT78 (TO-220AB)  
SOT404 (D2-PAK)  
[1] It is not possible to make connection to pin 2 of the SOT404 package.  
 
 
 
 
 

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