Datasheet > BUK7606-75B

BUK7606-75B

更新时间： 2024-11-24 11:14:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	977K
描述
N-channel TrenchMOS standard level FETProduction

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BUK7606-75B 数据手册

BUK7606-75B

N-channel TrenchMOS standard level FET

Rev. 03 — 3 February 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for standard level gate drive

sources

 Low conduction losses due to low

on-state resistance

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

300

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 11;

see Figure 12

4.8

5.6

mΩ

on-state

resistance

12 3 4 5 6 7...13

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