Datasheet > BUK7610-55AL

BUK7610-55AL

更新时间： 2024-11-25 22:32:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关脉冲
页数	文件大小	规格书
14页	105K
描述
N-channel TrenchMOS standard level FET

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中文翻译

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数据手册

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BUK7610-55AL 数据手册

BUK75/7610-55AL

N-channel TrenchMOS™ standard level FET

Rev. 01 — 31 March 2005

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips General-Purpose Automotive (GPA) TrenchMOS™ technology speciﬁcally

optimized for linear operation.

1.2 Features

■ TrenchMOS™ technology

■ 175 °C rated

■ Q101 compliant

■ Stable operation in linear mode.

1.3 Applications

■ Automotive systems

■ Repetitive clamped inductive

switching

■ DC linear motor control

■ 12 V and 24 V loads.

1.4 Quick reference data

■ E_DS(AL)S≤ 1.1 J

■ I_D≤ 75 A

■ R_DSon= 8.5 mΩ (typ)

■ P_tot≤ 300 W.

2. Pinning information

Table 1:

Pinning

Pin Description

Simpliﬁed outline

Symbol

gate (G)

drain (D)

source (S)

mb mounting base;

connected to drain (D)

mbb076

SOT404 (D2PAK)

2 3

SOT78 (TO-220AB)

12 3 4 5 6 7...14

中文翻译

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