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BUK7615-100A PDF预览

BUK7615-100A

更新时间: 2024-11-22 22:32:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 72K
描述
TrenchMOS transistor Standard level FET

BUK7615-100A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.8雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.015 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):230 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK7615-100A 数据手册

 浏览型号BUK7615-100A的Datasheet PDF文件第2页浏览型号BUK7615-100A的Datasheet PDF文件第3页浏览型号BUK7615-100A的Datasheet PDF文件第4页浏览型号BUK7615-100A的Datasheet PDF文件第5页浏览型号BUK7615-100A的Datasheet PDF文件第6页浏览型号BUK7615-100A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Standard level FET  
BUK7615-100A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
standard level field-effect power  
transistor in a plastic envelope  
suitable for surface mounting. Using  
trench’ technology the device  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
100  
75  
230  
175  
15  
V
A
W
˚C  
m  
features  
very  
low  
on-state  
resistance. It is intended for use in  
automotive and general purpose  
switching applications.  
RDS(ON)  
resistance  
VGS = 10 V  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain (no connection  
possible)  
g
2
3
source  
s
1
3
mb drain  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
100  
100  
20  
75  
53  
240  
230  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
0.65  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
Minimum footprint, FR4  
board  
50  
-
K/W  
January 1999  
1
Rev 1.000  

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