Datasheet > BUK761R6-40E

BUK761R6-40E

更新时间： 2024-11-24 11:12:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	722K
描述
N-channel TrenchMOS standard level FETProduction

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中文翻译

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技术参数
数据手册

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BUK761R6-40E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.71	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	245
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

BUK761R6-40E 数据手册

BUK761R6-40E

N-channel TrenchMOS standard level FET

5 September 2013

Product data sheet

1. General description

Standard level N-channel MOSFET in a SOT404A package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with V_GS(th)rating of greater than 1 V at 175 °C

•

3. Applications

12 V Automotive systems

•

Electric and electro-hydraulic power steering

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1

[1]

120

349

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

1.3

1.57

mΩ

V_GS= 10 V; I_D= 25 A; V_DS= 32 V;

Fig. 13; Fig. 14

48.2

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

中文翻译

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