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BUK7624-55T/R PDF预览

BUK7624-55T/R

更新时间: 2024-11-26 21:01:03
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
8页 68K
描述
TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power

BUK7624-55T/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.23雪崩能效等级(Eas):80 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):45 A
最大漏极电流 (ID):45 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):180 pF
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:103 W最大功率耗散 (Abs):103 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):60 ns最大开启时间(吨):53 ns
Base Number Matches:1

BUK7624-55T/R 数据手册

 浏览型号BUK7624-55T/R的Datasheet PDF文件第2页浏览型号BUK7624-55T/R的Datasheet PDF文件第3页浏览型号BUK7624-55T/R的Datasheet PDF文件第4页浏览型号BUK7624-55T/R的Datasheet PDF文件第5页浏览型号BUK7624-55T/R的Datasheet PDF文件第6页浏览型号BUK7624-55T/R的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Standard level FET  
BUK7624-55  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
standard level field-effect power  
transistor in a plastic envelope  
suitable for surface mounting. Using  
trench’ technology the device  
features very low on-state resistance  
and has integral zener diodes giving  
ESD protection up to 2kV. It is  
intended for use in automotive and  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
55  
45  
103  
175  
24  
V
A
W
˚C  
m  
RDS(ON)  
resistance  
VGS = 10 V  
general  
purpose  
switching  
applications.  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
source  
g
3
2
mb drain  
s
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
55  
55  
16  
45  
31  
180  
103  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage, all pins  
Human body model  
(100 pF, 1.5 k)  
-
2
kV  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
1.45  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
Minimum footprint, FR4  
board  
50  
-
K/W  
April 1998  
1
Rev 1.000  

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