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BUK7614-55,118 PDF预览

BUK7614-55,118

更新时间: 2024-11-26 14:51:07
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
8页 68K
描述
N-channel TrenchMOS standard level FET D2PAK 3-Pin

BUK7614-55,118 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证:符合
生命周期:Obsolete零件包装代码:D2PAK
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.16
Is Samacsys:N雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):68 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):270 pFJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL功耗环境最大值:142 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):105 ns
最大开启时间(吨):111 nsBase Number Matches:1

BUK7614-55,118 数据手册

 浏览型号BUK7614-55,118的Datasheet PDF文件第2页浏览型号BUK7614-55,118的Datasheet PDF文件第3页浏览型号BUK7614-55,118的Datasheet PDF文件第4页浏览型号BUK7614-55,118的Datasheet PDF文件第5页浏览型号BUK7614-55,118的Datasheet PDF文件第6页浏览型号BUK7614-55,118的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Standard level FET  
BUK7614-55  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
standard level field-effect power  
transistor in a plastic envelope  
suitable for surface mounting. Using  
trench’ technology the device  
features very low on-state resistance  
and has integral zener diodes giving  
ESD protection up to 2kV. It is  
intended for use in automotive and  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
55  
68  
142  
175  
14  
V
A
W
˚C  
m  
RDS(ON)  
resistance  
VGS = 10 V  
general  
purpose  
switching  
applications.  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
source  
g
3
2
mb drain  
s
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
55  
55  
16  
68  
48  
240  
142  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage, all pins  
Human body model  
(100 pF, 1.5 k)  
-
2
kV  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
1.05  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
Minimum footprint, FR4  
board  
50  
-
K/W  
April 1998  
1
Rev 1.000  

BUK7614-55,118 替代型号

型号 品牌 替代类型 描述 数据表
BUK9614-55A,118 NXP

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N-channel TrenchMOS logic level FET D2PAK 3-Pin
BUK9614-55A NXP

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TrenchMOS logic level FET

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