Datasheet > BUK7606-75B

BUK7606-75B

更新时间： 2024-11-22 22:32:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	303K
描述
TrenchMOS standard level FET

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数据手册
替代型号

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BUK7606-75B 数据手册

BUK75/7606-75B

TrenchMOS™ standard level FET

Rev. 02 — 20 September 2002

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:

BUK7506-75B in SOT78 (TO-220AB)

BUK7606-75B in SOT404 (D²-PAK).

1.2 Features

■ Very low on-state resistance.

■ 175 °C rated

■ Q101 compliant

■ Standard level compatible.

1.3 Applications

■ Automotive systems

■ 12 V, 24 V, and 42 V loads

■ Motors, lamps and solenoids

■ General purpose power switching.

1.4 Quick reference data

■ E_DS(AL)S≤ 852 mJ

■ I_D≤ 75 A

■ R_DSon= 4.8 mΩ (typ)

■ P_tot≤ 300 W.

2. Pinning information

Table 1:

Pinning - SOT78 and SOT404 simpliﬁed outlines and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

[1]

drain (d)

source (s)

mounting base,

connected to

drain (d)

MBB076

MBK116

MBK106

2 3

SOT78 (TO-220AB)

SOT404 (D²-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

12 3 4 5 6 7...15

中文翻译

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BUK7606-75B 替代型号

型号	品牌	替代类型	描述	数据表
BUK7606-75B,118	NXP	功能相似	N-channel TrenchMOS standard level FET D2PAK 3-Pin

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