Datasheet > BUK6D385-100E

BUK6D385-100E

更新时间： 2023-09-03 20:35:05

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	278K
描述
100 V, N-channel Trench MOSFETProduction

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BUK6D385-100E 数据手册

BUK6D385-100E

100 V, N-channel Trench MOSFET

29 April 2019

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6

(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Extended temperature range T_j= 175 °C

•

Side wettable flanks for optical solder inspection

ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

Trench MOSFET technology

AEC-Q101 qualified

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

V_GS

I_D

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_sp= 25 °C

3.7

P_tot

total power dissipation T_sp= 25 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 1.5 A; T_j= 25 °C

280

385

mΩ

12 3 4 5 6 7...15

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