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BUK6Y10-30P PDF预览

BUK6Y10-30P

更新时间: 2023-09-03 20:31:39
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 255K
描述
30 V, P-channel Trench MOSFETProduction

BUK6Y10-30P 数据手册

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BUK6Y10-30P  
30 V, P-channel Trench MOSFET  
17 April 2020  
Product data sheet  
1. General description  
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device  
(SMD) plastic package using Trench MOSFET technology.  
This product has been designed and qualified to AEC-Q101 standard for use in high-performance  
automotive applications such as reverse battery protection.  
2. Features and benefits  
High thermal power dissipation capability  
Suitable for thermally demanding environments due to 175 °C rating  
Trench MOSFET technology  
AEC-Q101 qualified  
3. Applications  
Reverse battery protection  
Power management  
High-side load switch  
Motor drive  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
VGS  
ID  
Parameter  
Conditions  
Min  
Typ  
Max  
-30  
20  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-
[1]  
-20  
V
VGS = -10 V; Tmb = 25 °C  
-
-
-80  
110  
A
Ptot  
total power dissipation Tmb = 25 °C  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -10 V; ID = -13.5 A; Tj = 25 °C  
-
8
10  
mΩ  
[1] VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C  
 
 
 
 
 

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