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BUK7109-75ATE

更新时间： 2024-11-25 06:44:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	225K
描述
N-channel TrenchPLUS standard level FET

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中文翻译

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数据手册

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BUK7109-75ATE 数据手册

BUK7109-75ATE

N-channel TrenchPLUS standard level FET

Rev. 02 — 10 February 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include TrenchPLUS diodes for

ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been

designed and qualified to the appropriate AEC standard for use in automotive critical

applications.

1.2 Features and benefits

Allows responsive temperature

monitoring due to integrated

temperature sensor

Low conduction losses due to low

on-state resistance

Q101 compliant

Electrostatically robust due to

Suitable for standard level gate drive

integrated protection diodes

sources

1.3 Applications

Electrical Power Assisted Steering

Variable Valve Timing for engines

(EPAS)

1.4 Quick reference data

Table 1.

Symbol Parameter

V_DSdrain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Static characteristics

Quick reference

Conditions

Min

Typ

Max Unit

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 50 A;

T_j= 25 °C; see Figure 7;

see Figure 8

mΩ

S_F(TSD)temperature sense

diode temperature

coefficient

I_F= 250 µA; T_j≥ -55 °C;

T_j≤ 175 °C

-1.4

648

-1.54 -1.68 mV/K

V_F(TSD)temperature sense

diode forward

I_F= 250 µA; T_j= 25 °C

658

668

voltage

12 3 4 5 6 7...15

中文翻译

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