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BUK7109-75ATE PDF预览

BUK7109-75ATE

更新时间: 2024-10-01 06:44:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 225K
描述
N-channel TrenchPLUS standard level FET

BUK7109-75ATE 数据手册

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BUK7109-75ATE  
N-channel TrenchPLUS standard level FET  
Rev. 02 — 10 February 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. The devices include TrenchPLUS diodes for  
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been  
designed and qualified to the appropriate AEC standard for use in automotive critical  
applications.  
1.2 Features and benefits  
„ Allows responsive temperature  
monitoring due to integrated  
temperature sensor  
„ Low conduction losses due to low  
on-state resistance  
„ Q101 compliant  
„ Electrostatically robust due to  
„ Suitable for standard level gate drive  
integrated protection diodes  
sources  
1.3 Applications  
„ Electrical Power Assisted Steering  
„ Variable Valve Timing for engines  
(EPAS)  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
VDS drain-source voltage Tj 25 °C; Tj 175 °C  
Static characteristics  
Quick reference  
Conditions  
Min  
Typ  
Max Unit  
-
-
75  
V
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 50 A;  
Tj = 25 °C; see Figure 7;  
see Figure 8  
-
8
9
mΩ  
SF(TSD) temperature sense  
diode temperature  
coefficient  
IF = 250 µA; Tj -55 °C;  
Tj 175 °C  
-1.4  
648  
-1.54 -1.68 mV/K  
VF(TSD) temperature sense  
diode forward  
IF = 250 µA; Tj = 25 °C  
658  
668  
mV  
voltage  

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