Datasheet > BUK7212-55B_11

BUK7212-55B_11

更新时间： 2024-10-01 12:20:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	207K
描述
N-channel TrenchMOS standard level FET

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BUK7212-55B_11 数据手册

BUK7212-55B

N-channel TrenchMOS standard level FET

Rev. 2 — 23 February 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for standard level gate drive

sources

Low conduction losses due to low

on-state resistance

Suitable for thermally demanding

environments due to 185 °C rating

1.3 Applications

12 V and 24 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 185 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 3; see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

167

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 9;

see Figure 10

10.2 12

mΩ

on-state

resistance

12 3 4 5 6 7...14

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