Datasheet > BUK75

BUK75

更新时间： 2024-10-01 03:23:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	91K
描述
N-channel TrenchMOS standard level FET

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中文翻译

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数据手册

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BUK75 数据手册

BUK75/7608-40B

N-channel TrenchMOS standard level FET

Rev. 02 — 16 November 2007

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

NXP High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

I Very low on-state resistance

I Q101 compliant

I 175 °C rated

I Standard level compatible

1.3 Applications

I Automotive systems

I General purpose power switching

I 12 V loads

I Motors, lamps and solenoids

1.4 Quick reference data

I E_DS(AL)S≤ 241 mJ

I I_D≤ 75 A

I R_DSon= 6.6 mΩ (typ)

I P_tot≤ 157 W

2. Pinning information

Table 1.

Pinning - SOT78 and SOT404, simpliﬁed outlines and symbol

Description

Gate (G)

Simpliﬁed outline

Symbol

[1]

Drain (D)

Source (S)

mounting base,

connected to

drain (D)

mbb076

SOT404 (D2PAK)

2 3

SOT78 (TO-220AB)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

12 3 4 5 6 7...14

中文翻译

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