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BUK714R1-40BT PDF预览

BUK714R1-40BT

更新时间: 2024-09-30 22:16:39
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
15页 117K
描述
TrenchMOS standard level FET

BUK714R1-40BT 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC, D2PAK-5针数:5
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.24雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0041 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):272 W
最大脉冲漏极电流 (IDM):748 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK714R1-40BT 数据手册

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BUK71/794R1-40BT  
TrenchMOS™ standard level FET  
Rev. 01 — 4 November 2004  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices  
include TrenchPLUS diodes for over-temperature protection.  
Product availability:  
BUK714R1-40BT in SOT426 (D2-PAK)  
BUK794R1-40BT in SOT263B (TO-220AB).  
1.2 Features  
Integrated temperature sensor  
Very low on-state resistance  
Q101 compliant  
175 °C rated.  
1.3 Applications  
Electrical Power Assisted Steering  
Motors, lamps and solenoids  
12 V loads  
General purpose power switching.  
1.4 Quick reference data  
RDSon = 3.4 m(typ)  
VDS 40 V  
ID 75 A  
Ptot 272 W.  
2. Pinning information  
Table 1:  
Pinning - SOT426 and SOT263B, simplified outline and symbol  
Simplified outline  
Pin Description  
Symbol  
1
2
3
4
5
gate (g)  
d
a
mb  
anode (a)  
drain (d)  
mb  
g
cathode (k)  
source (s)  
1
2 3 4 5  
mb mounting base;  
connected to drain (d)  
03nm72  
s
k
Front view  
MBK127  
1
5
MBL263  
SOT426 (D2-PAK)  
SOT263B (TO-220AB)  

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