Datasheet > BUK7109-75AIE/T3

BUK7109-75AIE/T3

更新时间： 2024-11-25 21:20:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	214K
描述
TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,120A I(D),TO-263BB

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技术参数
数据手册

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BUK7109-75AIE/T3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	120 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	272 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

BUK7109-75AIE/T3 数据手册

BUK7909-75AIE

N-channel TrenchPLUS standard level FET

Rev. 02 — 17 February 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include TrenchPLUS current sensing

and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed

and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Electrostatically robust due to

Reduced component count due to

integrated protection diodes

integrated current sensor

Low conduction losses due to low

Suitable for standard level gate drive

on-state resistance

sources

Q101 compliant

1.3 Applications

Electrical Power Assisted Steering

Variable Valve Timing for engines

(EPAS)

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 2; see Figure 3

[1]

120

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 50 A;

T_j= 25 °C; see Figure 7;

see Figure 8

mΩ

I_D/I_senseratio of drain current T_j> -55 °C; T_j< 175 °C;

to sense current V_GS> 10 V

450

500

550

[1] Current is limited by power dissipation chip rating.

12 3 4 5 6 7...13

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