Datasheet > BUK6Y61-60P

BUK6Y61-60P

更新时间： 2023-09-03 20:37:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	247K
描述
60 V, P-channel Trench MOSFETProduction

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BUK6Y61-60P 数据手册

BUK6Y61-60P

60 V, P-channel Trench MOSFET

16 March 2020

Product data sheet

1. General description

P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device

(SMD) plastic package using Trench MOSFET technology.

This product has been designed and qualified to AEC-Q101 standard for use in high-performance

automotive applications such as reverse battery protection.

2. Features and benefits

•

High thermal power dissipation capability

•

Suitable for thermally demanding environments due to 175 °C rating

Trench MOSFET technology

AEC-Q101 qualified

3. Applications

•

Reverse battery protection

Power management

High-side loadswitch

Motor drive

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

V_GS

I_D

Parameter

Conditions

Min

Typ

Max

-60

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

[1]

-20

V_GS= -10 V; T_mb= 25 °C

-25

P_tot

total power dissipation T_mb= 25 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -4.7 A; T_j= 25 °C

mΩ

[1] V_GS= -20 V/+5 V according AEC-Q101 at T_j= 175 °C; V_GS= -20 V/+20 V according AEC-Q101 at T_j= 150 °C

12 3 4 5 6 7...13

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