5秒后页面跳转
BUK7107-55ATE,118 PDF预览

BUK7107-55ATE,118

更新时间: 2024-10-01 21:22:15
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
15页 213K
描述
BUK7107-55ATE - N-channel TrenchPLUS standard level FET D2PAK 5-Pin

BUK7107-55ATE,118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, D2PAK-5
针数:5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.19雪崩能效等级(Eas):460 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):140 A
最大漏极电流 (ID):140 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):272 W
最大脉冲漏极电流 (IDM):560 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK7107-55ATE,118 数据手册

 浏览型号BUK7107-55ATE,118的Datasheet PDF文件第2页浏览型号BUK7107-55ATE,118的Datasheet PDF文件第3页浏览型号BUK7107-55ATE,118的Datasheet PDF文件第4页浏览型号BUK7107-55ATE,118的Datasheet PDF文件第5页浏览型号BUK7107-55ATE,118的Datasheet PDF文件第6页浏览型号BUK7107-55ATE,118的Datasheet PDF文件第7页 
BUK7107-55ATE  
N-channel TrenchPLUS standard level FET  
Rev. 02 — 19 February 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. The devices include TrenchPLUS diodes for  
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been  
designed and qualified to the appropriate AEC standard for use in automotive critical  
applications.  
1.2 Features and benefits  
„ Allows responsive temperature  
monitoring due to integrated  
temperature sensor  
„ Low conduction losses due to low  
on-state resistance  
„ Q101 compliant  
„ Electrostatically robust due to  
„ Suitable for standard level gate drive  
integrated protection diodes  
sources  
1.3 Applications  
„ Automotive and general purpose  
„ Fan control  
power switching  
„ Variable Valve Timing for engines  
„ Electrical Power Assisted Steering  
(EPAS)  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
55  
V
A
drain current  
VGS = 10 V; Tmb = 25 °C;  
see Figure 2; see Figure 3;  
[1]  
140  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 1  
-
-
-
-
272  
7
W
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 50 A;  
Tj = 25 °C  
5.8  
-
mΩ  
mJ  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
drain-source  
ID = 68 A; Vsup 55 V;  
RGS = 50 ; VGS = 10 V;  
Tj(init) = 25 °C; unclamped  
460  
avalanche energy  
[1] Current is limited by power dissipation chip rating  
 
 
 
 
 
 

与BUK7107-55ATE,118相关器件

型号 品牌 获取价格 描述 数据表
BUK7108-40AIE PHILIPS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BUK7108-40AIE NXP

获取价格

TrenchPLUS standard level FET
BUK7109-75AIE NXP

获取价格

N-channel TrenchPLUS standard level FET
BUK7109-75AIE/T3 NXP

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,120A I(D),TO-263BB
BUK7109-75ATE NXP

获取价格

N-channel TrenchPLUS standard level FET
BUK7109-75ATE,118 NXP

获取价格

N-channel TrenchPLUS standard level FET D2PAK 5-Pin
BUK714R1-40BT NXP

获取价格

TrenchMOS standard level FET
BUK7207-30B NXP

获取价格

TrenchMOS standard level FET
BUK7207-30B,118 NXP

获取价格

BUK7207-30B - N-channel TrenchMOS standard level FET DPAK 3-Pin
BUK7208-40B NXP

获取价格

TrenchMOS standard level FET