是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | D2PAK-5 | Reach Compliance Code: | not_compliant |
风险等级: | 5.69 | 雪崩能效等级(Eas): | 1460 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 620 A |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK7105-40ATE,118 | NXP |
获取价格 |
N-channel TrenchPLUS standard level FET D2PAK 5-Pin |
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BUK7105-40ATE/T3 | NXP |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,75A I(D),TO-263BB |
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BUK7107-40ATC | NXP |
获取价格 |
TrenchPLUS standard level FET |
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BUK7107-55AIE | NXP |
获取价格 |
TrenchPLUS standard level FET |
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BUK7107-55AIE,118 | NXP |
获取价格 |
N-channel TrenchPLUS standard level FET D2PAK 5-Pin |
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BUK7107-55AIE_09 | NXP |
获取价格 |
N-channel TrenchPLUS standard level FET |
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BUK7107-55ATE | NXP |
获取价格 |
N-channel TrenchPLUS standard level FET |
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BUK7107-55ATE,118 | NXP |
获取价格 |
BUK7107-55ATE - N-channel TrenchPLUS standard level FET D2PAK 5-Pin |
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BUK7108-40AIE | PHILIPS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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BUK7108-40AIE | NXP |
获取价格 |
TrenchPLUS standard level FET |
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