Datasheet > BUK6E3R2-55C,127

BUK6E3R2-55C,127

更新时间： 2024-01-03 14:47:04

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	160K
描述
N-channel TrenchMOS intermediate level FET TO-262 3-Pin

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技术参数
数据手册

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BUK6E3R2-55C,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-262
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.73	Base Number Matches：	1

BUK6E3R2-55C,127 数据手册

BUK6E3R2-55C

N-channel TrenchMOS intermediate level FET

Rev. 01 — 6 September 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

 Suitable for intermediate level gate

drive sources

1.3 Applications

 12 V and 24 V Automotive systems

 Start-Stop micro-hybrid applications

 Transmission control

 Electric and electro-hydraulic power

steering

 Ultra high performance power

 Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

120

306

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

2.7

3.2

mΩ

on-state

T_j= 25 °C; see Figure 11

resistance

12 3 4 5 6 7...14

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