Datasheet > BSZ086P03NS3E G

BSZ086P03NS3E G

更新时间： 2024-11-06 14:55:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	549K
描述
英飞凌高度创新型 OptiMOS? 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。

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BSZ086P03NS3E G 数据手册

BSZ086P03NS3E G

OptiMOS^TMP3 Power-Transistor

Product Summary

Features

V_DS

-30

8.6

-40

• single P-Channel in S3O8

R_DS(on),max

I_D

mΩ

• Qualified according JEDEC¹⁾for target applications

• 150 °C operating temperature

PG-TSDSON-8

• V _GS=25 V, specially suited for notebook applications

• Pb-free; RoHS compliant

• ESD protected

• applications: battery management, load switching

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

Lead free

Yes

Halogen free

Packing

Yes

BSZ086P03NS3E G PG-TSDSON-8

086P3NE

non-dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=70 °C

-40

Continuous drain current

T _A=25 °C²⁾

-13.5

T _C=25 °C³⁾

I _D,pulse

E _AS

-160

Pulsed drain current

105

I _D=-20 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

V _GS

P _tot

±25

T _A=25 °C

Power dissipation

T _A=25 °C²⁾

2.1

T _j, T _stg

-55 … 150

3 (>= 4 kV)

260

Operating and storage temperature

ESD class

°C

JESD22-A114 HBM

Soldering temperature

55/150/56

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

Rev. 2.03

page 1

2012-04-13

12 3 4 5 6 7...9

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