Datasheet > BSS84AK,215

BSS84AK,215

更新时间： 2024-11-23 19:59:51

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	849K
描述
BSS84AK - 50 V, 180 mA P-channel Trench MOSFET TO-236 3-Pin

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技术参数
数据手册

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BSS84AK,215 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-236
包装说明：	PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	compliant	风险等级：	7.93
Base Number Matches：	1

BSS84AK,215 数据手册

BSS84AK

T23

50 V, 180 mA P-channel Trench MOSFET

Rev. 1 — 23 May 2011

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

ESD protection up to 1 kV

AEC-Q101 qualified

Trench MOSFET technology

1.3 Applications

Relay driver

High-side loadswitch

Switching circuits

High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-50

V_GS

-20

[1]

I_D

V_GS= -10 V; T_amb= 25 °C

-180 mA

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -100 mA;

T_j= 25 °C

4.5

7.5

Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...16

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