BSS123LT1D

更新时间： 2024-11-19 22:27:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	61K
描述
Power MOSFET 170 mAmps, 100 Volts

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BSS123LT1D 数据手册

BSS123LT1

Preferred Device

Power MOSFET

170 mAmps, 100 Volts

N−Channel SOT−23

http://onsemi.com

Features

• Pb−Free Packages are Available

170 mAMPS

100 VOLTS

R_DS(on)= 6 W

N−Channel

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

DSS

100

Vdc

Gate−Source Voltage

− Continuous

GSM

±20

±40

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

Drain Current

− Continuous (Note 1)

− Pulsed (Note 2)

Adc

0.17

0.68

MARKING

DIAGRAM

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

SOT−23

CASE 318

STYLE 21

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

= Device Code

= Date Code

(Note 3) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

PIN ASSIGNMENT

Drain

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Width v 300 ms, Duty Cycle v 2.0%.

3. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

Gate

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 5

BSS123LT1/D

12 3 4

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