Datasheet > BSS123W

BSS123W

更新时间： 2024-11-19 17:00:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	476K
描述
0.17A, 100V, 0.2W, N Channel, Small Signal MOSFETs

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数据手册

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BSS123W 数据手册

N-Channel Enhancement Mode MOSFET

BSS123

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

BSS123

SOT-23

BSS123W

SOT-323

Typical Applications



Switching application

Mechanical Data



Case: SOT-23, SOT-323, SOT-23-3L

BSS123-3L

SOT-23-3L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BSS123

BSS123W

BSS123-3L

SOT-23

SOT-323

SOT-23-3L

3000pcs / Tape & Reel

B123

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

100

Unit

Gate-to-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current ^*3

170

I_DM

680

MTM0038A: February 2023 [2.2]

www.gmesemi.com

12 3 4 5

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与BSS123W相关器件

型号	品牌	获取价格	描述	数据表
BSS123W_0711	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123W_1	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123W-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123W-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123WF2	YANGJIE	获取价格	Small Signal Field-Effect Transistor,
BSS123WQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
BSS123X	YANGJIE	获取价格	SOT-563
BSS123Z	UTC	获取价格	N-CH
BSS124	INFINEON	获取价格	SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSS124E6288	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Met