5秒后页面跳转
BSS123W-7-F PDF预览

BSS123W-7-F

更新时间: 2024-11-18 02:55:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 85K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS123W-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOT-323, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:13 weeks
风险等级:1.19其他特性:HIGH RELIABILITY, LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):0.17 A最大漏极电流 (ID):0.17 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):6 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON

BSS123W-7-F 数据手册

 浏览型号BSS123W-7-F的Datasheet PDF文件第2页浏览型号BSS123W-7-F的Datasheet PDF文件第3页浏览型号BSS123W-7-F的Datasheet PDF文件第4页 
SPICE MODELS: BSS123W  
BSS123W  
Lead-free Green  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
·
·
Low Gate Threshold Voltage  
A
SOT-323  
Low Input Capacitance  
D
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
Fast Switching Speed  
Low Input/Output Leakage  
B
C
B
High Drain-Source Voltage Rating  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device, Note 3 and 4  
C
G
S
G
H
D
0.65 Nominal  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
K
J
G
H
M
Mechanical Data  
J
·
·
Case: SOT-323  
L
D
E
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
K
0.90  
0.25  
0.10  
0°  
Drain  
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
M
a
Terminals: Solderable per MIL-STD-202, Method 208  
Gate  
All Dimensions in mm  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Source  
·
·
·
Marking: Date Code and Type Code, See Page 3  
Type Code: K23  
Weight: 0.006 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
Value  
100  
Units  
V
V
V
Drain-Source Voltage  
VDGR  
100  
Drain-Gate Voltage RGS £ 20KW  
Gate-Source Voltage  
VGSS  
Continuous  
±20  
ID  
IDM  
Drain Current (Note 1)  
Continuous  
Pulsed  
170  
680  
mA  
Pd  
Total Power Dissipation (Note 1)  
200  
625  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product  
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30368 Rev. 6 - 2  
1 of 4  
BSS123W  
www.diodes.com  
ã Diodes Incorporated  

BSS123W-7-F 替代型号

型号 品牌 替代类型 描述 数据表
BSS123W-7 DIODES

类似代替

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met

与BSS123W-7-F相关器件

型号 品牌 获取价格 描述 数据表
BSS123WF2 YANGJIE

获取价格

Small Signal Field-Effect Transistor,
BSS123WQ DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
BSS123X YANGJIE

获取价格

SOT-563
BSS123Z UTC

获取价格

N-CH
BSS124 INFINEON

获取价格

SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSS124E6288 INFINEON

获取价格

Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Met
BSS125 INFINEON

获取价格

SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSS-125-01-C-D SAMTEC

获取价格

Board Connector
BSS-125-01-C-D-A SAMTEC

获取价格

Board Connector
BSS-125-01-C-D-LC SAMTEC

获取价格

Board Connector